DocumentCode
3862899
Title
Probing thermal evanescent waves on dielectric surfaces
Author
Yusuke Kajihara;Takafumi Yokoyama;Kuan-Ting Lin;Sunmi Kim
Author_Institution
Institute of Industrial Science, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo, 153-8505, Japan
fYear
2015
Firstpage
1
Lastpage
2
Abstract
Our passive near-field microscope probes thermal evanescent waves due to local phenomena on material´s surface. With the microscope, we study dielectric samples since they have surface phonon resonances whose resonance wavelengths are very close to our detection wavelength. From the results, GaAs, SiC, and AlN show reasonable signals due to thermal fluctuations, whereas GaN show very unique characteristics. In this report, we show and discuss the results.
Keywords
"Gallium nitride","Surface waves","Silicon carbide","Gallium arsenide","Aluminum nitride","III-V semiconductor materials","Probes"
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
ISSN
2162-2027
Electronic_ISBN
2162-2035
Type
conf
DOI
10.1109/IRMMW-THz.2015.7327680
Filename
7327680
Link To Document