• DocumentCode
    3862899
  • Title

    Probing thermal evanescent waves on dielectric surfaces

  • Author

    Yusuke Kajihara;Takafumi Yokoyama;Kuan-Ting Lin;Sunmi Kim

  • Author_Institution
    Institute of Industrial Science, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo, 153-8505, Japan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Our passive near-field microscope probes thermal evanescent waves due to local phenomena on material´s surface. With the microscope, we study dielectric samples since they have surface phonon resonances whose resonance wavelengths are very close to our detection wavelength. From the results, GaAs, SiC, and AlN show reasonable signals due to thermal fluctuations, whereas GaN show very unique characteristics. In this report, we show and discuss the results.
  • Keywords
    "Gallium nitride","Surface waves","Silicon carbide","Gallium arsenide","Aluminum nitride","III-V semiconductor materials","Probes"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2015.7327680
  • Filename
    7327680