Title :
Photomixing and photoconductive THz generation improvement in SI-GaAs after carbon irradiation
Author :
Prathmesh Deshmukh;Abhishek Singh;Sanjoy Pal;S. S. Prabhu;S. Mathimalar;Vandana Nanal;R. G. Pillay;G.H. Doehler;M. Mendez-Aller;S. Preu
Author_Institution :
Tata Institute of Fundamental Research, HomiBhabha Road, Mumbai 400005, India
Abstract :
We report significant improvement in pulsed and continuous wave (CW) THz generation when semi insulating GaAs (SI-GaAs) is irradiated with carbon ions. Irradiation reduces the carrier lifetime in SI-GaAs and increases its resistivity. This results in reduced screening effects and lesser heat dissipation in the THz pulse emitter. Reduced lifetime significantly improves the bandwidth of the CW THz system.
Keywords :
"Gallium arsenide","Dipole antennas","Radiation effects","Silicon","Physics","Carbon dioxide","Charge carrier lifetime"
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
Electronic_ISBN :
2162-2035
DOI :
10.1109/IRMMW-THz.2015.7327843
