• DocumentCode
    3862916
  • Title

    Photomixing and photoconductive THz generation improvement in SI-GaAs after carbon irradiation

  • Author

    Prathmesh Deshmukh;Abhishek Singh;Sanjoy Pal;S. S. Prabhu;S. Mathimalar;Vandana Nanal;R. G. Pillay;G.H. Doehler;M. Mendez-Aller;S. Preu

  • Author_Institution
    Tata Institute of Fundamental Research, HomiBhabha Road, Mumbai 400005, India
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report significant improvement in pulsed and continuous wave (CW) THz generation when semi insulating GaAs (SI-GaAs) is irradiated with carbon ions. Irradiation reduces the carrier lifetime in SI-GaAs and increases its resistivity. This results in reduced screening effects and lesser heat dissipation in the THz pulse emitter. Reduced lifetime significantly improves the bandwidth of the CW THz system.
  • Keywords
    "Gallium arsenide","Dipole antennas","Radiation effects","Silicon","Physics","Carbon dioxide","Charge carrier lifetime"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2015.7327843
  • Filename
    7327843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3862916