• DocumentCode
    3863047
  • Title

    TE-pass polarizer using metal vias for silicon-on-insulator platform

  • Author

    Humaira Zafar;Soha E. Yousuf;Anatol Khilo

  • Author_Institution
    Institute Center for Microsystems, Department of Electrical Engineering and Computer Science, Masdar Institute of Science and Technology, Abu Dhabi, United Arab Emirates
  • fYear
    2015
  • fDate
    6/15/2016 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A TE-pass polarizer that uses metal vias for absorption of TM light is proposed. A 100-micron device can achieve 20dB extinction ratio with 0.23dB insertion loss. The polarizer is compatible with standard silicon-on-insulator foundry processes.
  • Keywords
    "Insertion loss","Optical waveguides","Propagation losses","Metals","Silicon-on-insulator","Silicon photonics"
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2015
  • Electronic_ISBN
    2166-8892
  • Type

    conf

  • DOI
    10.1109/OECC.2015.7340333
  • Filename
    7340333
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3863047