• DocumentCode
    3863218
  • Title

    <200 nm Wafer-to-wafer overlay accuracy in wafer level Cu/SiO2 hybrid bonding for BSI CIS

  • Author

    B. Rebhan;M. Bernauer;T. Wagenleitner;M. Heilig;F. Kurz;S. Lhostis;E. Deloffre;A. Jouve;V. Balan;L. Chitu

  • Author_Institution
    EV Group, DI E. Thallner Stra?e 1, 4782 St. Florian/Inn, Austria
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Sub 200 nm wafer-to-wafer (w2w) overlay accuracy on the entire 300 mm wafer was successfully demonstrated via wafer level Cu/SiO2 hybrid bonding. Cu bonding pads relevant for back-side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor (CIS) were used for the experiment. Further, a crucial component to improve the overlay accuracy, namely the overlay model which identifies systematic alignment errors, was described.
  • Keywords
    "Bonding","Surface treatment","Wafer bonding","Annealing","Rough surfaces","Surface roughness"
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging and Technology Conference (EPTC), 2015 IEEE 17th
  • Type

    conf

  • DOI
    10.1109/EPTC.2015.7412403
  • Filename
    7412403
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3863218