• DocumentCode
    3863254
  • Title

    Design of power amplifier MMICs based on GaN HEMTs at 110GHz

  • Author

    Hou Yanfei;Yu Weihua;Luo Xiaobin;Lv Yuanjie;Dun Shaobo;Feng Zhihong

  • Author_Institution
    Beijing Key Laboratory of Millimeter-wave and Terahertz Technology, Beijing Institute of Technology, 100081, Beijing, China
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents a power amplifier (PA) Monolithic Microwave Integrated Circuit (MMIC) based on GaN High Electron Mobility Transistor (HEMT) at 110 GHz. A parallel cascade class AB power amplifier is used in order to increase linearity and efficiency. This single-ended three-stage power amplifier provides 19.6dBm output power (Pout) with large signal gain of 7.6dB and power added efficiency (PAE) of 5.7% at 110GHz. The proposed power amplifier exhibits output power of 18.7dBm at 1dB compression point (P1dB).
  • Keywords
    "Power amplifiers","Power generation","Integrated circuits","HEMTs","Decision support systems","Impedance","Microwave amplifiers"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7413154
  • Filename
    7413154
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3863254