DocumentCode :
3863254
Title :
Design of power amplifier MMICs based on GaN HEMTs at 110GHz
Author :
Hou Yanfei;Yu Weihua;Luo Xiaobin;Lv Yuanjie;Dun Shaobo;Feng Zhihong
Author_Institution :
Beijing Key Laboratory of Millimeter-wave and Terahertz Technology, Beijing Institute of Technology, 100081, Beijing, China
Volume :
2
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
This paper presents a power amplifier (PA) Monolithic Microwave Integrated Circuit (MMIC) based on GaN High Electron Mobility Transistor (HEMT) at 110 GHz. A parallel cascade class AB power amplifier is used in order to increase linearity and efficiency. This single-ended three-stage power amplifier provides 19.6dBm output power (Pout) with large signal gain of 7.6dB and power added efficiency (PAE) of 5.7% at 110GHz. The proposed power amplifier exhibits output power of 18.7dBm at 1dB compression point (P1dB).
Keywords :
"Power amplifiers","Power generation","Integrated circuits","HEMTs","Decision support systems","Impedance","Microwave amplifiers"
Publisher :
ieee
Conference_Titel :
Microwave Conference (APMC), 2015 Asia-Pacific
Print_ISBN :
978-1-4799-8765-8
Type :
conf
DOI :
10.1109/APMC.2015.7413154
Filename :
7413154
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3863254
بازگشت