New phototransistor design to improve the electrical and optical performance using gate-engineering aspect

Our objective in this work is to propose a novel optically controlled field effect transistor OC-FET design by using the gate engineering paradigm. Besides, analytical analysis has been conducted and investigated for the improvement of the electrical and optical criteria related to OC-FET-based applications. By using a compact modeling framework, the comparison between the proposed Dual Gate (DG) OC-FET design against its conventional counterpart has been exploited to validate the enhanced electrical efficiency of the presented structure in terms of increased gain voltage, ION/IOFF ratio and superior drain current driving capability. The obtained results are found to be in a good agreement in comparison to that provided by the numerical results, thus confirming the precision of our modeling approach.