DocumentCode
386621
Title
High-stable low-noise microwave oscillator
Author
Krasilnikov, S.V.
Author_Institution
Electrotechnical Univ., St. Petersburg, Russia
fYear
2002
fDate
9-13 Sept. 2002
Firstpage
123
Lastpage
124
Abstract
This paper describes a high-stability low-noise microwave oscillator. Limiting of power level at the input of the amplifying element ensures parameter stability. Results of a numerical simulation of the self-excited oscillator are presented.
Keywords
Schottky gate field effect transistors; microwave oscillators; numerical analysis; phase noise; semiconductor device models; MESFET; amplifying element; high-stability low-noise microwave oscillator; numerical simulation; parameters stability; power level limiting; self-excited oscillator; Dielectrics; Feedback loop; Gallium arsenide; Microwave FETs; Microwave oscillators; Phase noise; Resonant frequency; Resonator filters; Stability; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN
966-7968-12-X
Type
conf
DOI
10.1109/CRMICO.2002.1137171
Filename
1137171
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