DocumentCode :
386621
Title :
High-stable low-noise microwave oscillator
Author :
Krasilnikov, S.V.
Author_Institution :
Electrotechnical Univ., St. Petersburg, Russia
fYear :
2002
fDate :
9-13 Sept. 2002
Firstpage :
123
Lastpage :
124
Abstract :
This paper describes a high-stability low-noise microwave oscillator. Limiting of power level at the input of the amplifying element ensures parameter stability. Results of a numerical simulation of the self-excited oscillator are presented.
Keywords :
Schottky gate field effect transistors; microwave oscillators; numerical analysis; phase noise; semiconductor device models; MESFET; amplifying element; high-stability low-noise microwave oscillator; numerical simulation; parameters stability; power level limiting; self-excited oscillator; Dielectrics; Feedback loop; Gallium arsenide; Microwave FETs; Microwave oscillators; Phase noise; Resonant frequency; Resonator filters; Stability; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN :
966-7968-12-X
Type :
conf
DOI :
10.1109/CRMICO.2002.1137171
Filename :
1137171
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=386621
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