Selective etching of multilevel submicron structures in plasma-chemical reactor (PCR) with low ion energy

Author

Ustalov, V.V. ; Fedorovich, O.A. ; Levitskaja, S.K.

Author_Institution

NC Nucl. Inst., Nat. Acad. of Sci., Kiev, Ukraine

fYear

2002

fDate

9-13 Sept. 2002

Firstpage

371

Lastpage

373

Abstract

Presented here are the results of selective plasma-chemical and chemical etching of multilevel structures with submicron element sizes. Plasma-chemical etching was performed in a PCR, with closed electron drift, and the chemically active ion energy was controlled in the range from 15 up to 300 eV with a variable magnetic field. Argon, insulating gas, chladone-218, and their mixtures with oxygen, were used as working gases. This method was able to remove twenty technological layers with 0.15 μm element size.

Keywords

failure analysis; integrated circuit manufacture; plasma materials processing; sputter etching; 0.15 micron; 15 to 300 eV; Ar; IC failure analysis; IC production; O; SF₆; Si-SiO₂; chemically active ion energy control; chladone-218; closed electron drift PCR; insulating gasses; layer element size; low ion energy PCR; low ion energy plasma-chemical reactors; multilevel submicron structure selective etching; oxygen mixture working gasses; plasma-chemical etching; selective chemical etching; technological layer removal; variable magnetic field ion energy control; Argon; Chemical elements; Electric variables control; Electrons; Etching; Inductors; Magnetic fields; Magnetic variables control; Plasma applications; Plasma chemistry;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference

Print_ISBN

966-7968-12-X

Type

conf

DOI

10.1109/CRMICO.2002.1137275

Filename

1137275