DocumentCode
386732
Title
A novel technique for non-volatile data storage using avalanche degradation
Author
Schoeman, Jf ; Du Plessis, Monuko
Author_Institution
Pretoria Univ., South Africa
Volume
1
fYear
2002
fDate
2-4 Oct. 2002
Firstpage
411
Abstract
A novel bipolar EEPROM is presented. Data can be stored in bipolar transistors or diodes by using avalanche degradation to alter junction characteristics. The relative ease of manipulating breakdown voltages makes it easier to design devices to operate with low programming voltages. Various two and three junction devices are analysed for non-volatile storage characteristics.
Keywords
EPROM; avalanche breakdown; bipolar memory circuits; semiconductor device breakdown; avalanche degradation; bipolar EEPROM; bipolar transistors; breakdown voltage manipulation; diodes; low programming voltages; nonvolatile storage characteristics; three junction devices; two junction devices; Annealing; Bipolar transistors; Breakdown voltage; EPROM; Hot carriers; Memory; Semiconductor diodes; Semiconductor process modeling; Temperature; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Africon Conference in Africa, 2002. IEEE AFRICON. 6th
Print_ISBN
0-7803-7570-X
Type
conf
DOI
10.1109/AFRCON.2002.1146872
Filename
1146872
Link To Document