Title :
A novel technique for non-volatile data storage using avalanche degradation
Author :
Schoeman, Jf ; Du Plessis, Monuko
Author_Institution :
Pretoria Univ., South Africa
Abstract :
A novel bipolar EEPROM is presented. Data can be stored in bipolar transistors or diodes by using avalanche degradation to alter junction characteristics. The relative ease of manipulating breakdown voltages makes it easier to design devices to operate with low programming voltages. Various two and three junction devices are analysed for non-volatile storage characteristics.
Keywords :
EPROM; avalanche breakdown; bipolar memory circuits; semiconductor device breakdown; avalanche degradation; bipolar EEPROM; bipolar transistors; breakdown voltage manipulation; diodes; low programming voltages; nonvolatile storage characteristics; three junction devices; two junction devices; Annealing; Bipolar transistors; Breakdown voltage; EPROM; Hot carriers; Memory; Semiconductor diodes; Semiconductor process modeling; Temperature; Thermal degradation;
Conference_Titel :
Africon Conference in Africa, 2002. IEEE AFRICON. 6th
Print_ISBN :
0-7803-7570-X
DOI :
10.1109/AFRCON.2002.1146872
