• DocumentCode
    386806
  • Title

    Recent advances in semiconductor lasers

  • Author

    Rediker, R.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, MA, USA
  • Volume
    13
  • fYear
    1966
  • fDate
    21-25 March 1966
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    The threshold current for GaAs Diode lasers has been reduced at the higher temperatures and has led to higher external quantum efficiencies at these temperatures. Using new materials, laser action has been extended further in the infrared and has reached the 8-14-\\mu atmospheric window. Diode lasers in which the laser action occurs in the bulk of the semiconductor are reported. Semiconductor lasers have been pumped with an electron beam.
  • Keywords
    Diode lasers; Electron beams; Gallium arsenide; Laser excitation; Optical materials; Pump lasers; Semiconductor lasers; Semiconductor materials; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    1958 IRE International Convention Record
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/IRECON.1965.1147513
  • Filename
    1147513
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=386806