DocumentCode :
386810
Title :
New trends in microelectronics fabrication technology-1965
Author :
Thornton, C.
Author_Institution :
Philco Corporation, Lansdale, PA, USA
Volume :
13
fYear :
1966
fDate :
21-25 March 1966
Firstpage :
53
Lastpage :
66
Abstract :
A number of significant new developments in silicon monolithic microcircuit fabrication technology have emerged during the past year. Of particular importance are improved thin-film over silicon components, methods for incorporating insulating and conducting layers within the semiconductor, localized epitaxial growth, ultra small geometry techniques, and stability improvements in planar devices. Advanced methods for economical packaging of complex microcircuitry, which eliminate the need for bonded wire connections to silicon chips, are also evolving. This paper describes these new developments and considers the extent to which microcircuit design will be affected. In particular, monolithic technology has been greatly extended, making it possible to fabricate circuits which had been considered to be beyond the limits of the technique.
Keywords :
Epitaxial growth; Fabrication; Geometry; Insulation; Microelectronics; Semiconductor device packaging; Semiconductor thin films; Silicon on insulator technology; Stability; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
1958 IRE International Convention Record
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/IRECON.1965.1147521
Filename :
1147521
Link To Document :
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