• DocumentCode
    387030
  • Title

    Subthreshold design considerations for insulated-gate field-effect transistors

  • Author

    Troutman, R.

  • Author_Institution
    IBM Corp., Essex Junction, VT, USA
  • Volume
    XVI
  • fYear
    1973
  • fDate
    14-16 Feb. 1973
  • Firstpage
    108
  • Lastpage
    109
  • Abstract
    A new subthreshold IGFET model, which includes dependence on gate, drain and substrate voltages for both long and short channels, will be described. Implications for circuit design will be discussed.
  • Keywords
    Annealing; Doping; Electrons; Equations; FETs; Insulation; Semiconductor process modeling; Solid state circuits; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1973.1155194
  • Filename
    1155194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=387030