Title :
HV silicon-gate MOS integrated circuit for driving piezoelectric tactile displays
Author :
Saraswat, Krishna ; Meindl, J.
Author_Institution :
Stanford University, Stanford, CA, USA
Abstract :
A 180-V Si-gate MOS transistor using standard MOS LSI technology and capable of driving piezoelectric tactile displays has been developed. A novel theory predicts accurately walkout of the transistor´s high-voltage junction breakdown.
Keywords :
Breakdown voltage; Displays; Electron traps; Fabrication; MOS integrated circuits; MOSFETs; Metalworking machines; Piezoelectric transducers; Threshold voltage; Voltage control;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1974.1155282
