• DocumentCode
    387033
  • Title

    DMOS experimental and theoretical study

  • Author

    Rodgers, T. ; Asai, Satoshi ; Pocha, M. ; Dutton, Rachael ; Meindl, J.

  • Author_Institution
    Stanford University, Stanford, CA, USA
  • Volume
    XVIII
  • fYear
    1975
  • fDate
    27426
  • Firstpage
    122
  • Lastpage
    123
  • Abstract
    An experimental and theoretical investigation of DMOS transistors with widely varying substrate doping and channel lengths has been performed. A simple two-transistor model, which includes velocity saturation was used to give insight into the physics of DMOS devices. A more complete model will be presented.
  • Keywords
    Circuit simulation; Design automation; Electrons; Logic; MOS devices; MOSFETs; Predictive models; Solid state circuits; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
  • Type

    conf

  • DOI
    10.1109/ISSCC.1975.1155362
  • Filename
    1155362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=387033