DocumentCode :
387042
Title :
A new approach to bipolar LSI:C³L
Author :
Peltier, A.
Author_Institution :
Motorola Semiproducts Division, Mesa, AZ, USA
Volume :
XVIII
fYear :
1975
fDate :
27426
Firstpage :
168
Lastpage :
169
Abstract :
Low threshold Schottky diodes have been used to realize a single transistor NAND logic cell. By using PNP current source-load devices, a very dense, efficient, and high performance LSI logic has been obtained.
Keywords :
Aluminum; Current supplies; Decoding; Etching; Large scale integration; Logic; Parasitic capacitance; Resistors; Schottky diodes; Titanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
Type :
conf
DOI :
10.1109/ISSCC.1975.1155432
Filename :
1155432
Link To Document :
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