DocumentCode :
387054
Title :
A 1.4-million-element CCD image sensor
Author :
Stevens, E. ; Teh-Hsuang Lee ; Nicols, D. ; Anagnostopoulos, C. ; Berkey, B. ; Win Chang ; Kelly, T. ; Khosla, R. ; Losee, D. ; Tredwell, T.
Author_Institution :
Eastman Kodak Electronics Research Laboratories, Rochester, NY, USA
Volume :
XXX
fYear :
1987
fDate :
0-0 Feb. 1987
Firstpage :
114
Lastpage :
115
Abstract :
A 2/3" format 1.4 megapixel full-frame CCD image sensor with a cell size of 
m, that achieves a quantum efficiency of 50% at 550nm, will be disclosed. Output-amplifier noise is 15rms electrons. Amplifier uses buried channel LDD NMOSFETs. Input-referred sensitivity is 15μV/electron over a 71MHz bandwidth. Device has been fabricated using a two-phase, two-level polysilicon process.
m, that achieves a quantum efficiency of 50% at 550nm, will be disclosed. Output-amplifier noise is 15rms electrons. Amplifier uses buried channel LDD NMOSFETs. Input-referred sensitivity is 15μV/electron over a 71MHz bandwidth. Device has been fabricated using a two-phase, two-level polysilicon process.Keywords :
Charge coupled devices; Charge-coupled image sensors; Consumer electronics; Electrons; Image resolution; Image sensors; Optical sensors; Pixel; Solid state circuits; TV;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1987.1157224
Filename :
1157224
Link To Document :
