Title :
A 120ns 4Mb CMOS EPROM
Author :
Atsumi, S. ; Tanaka, Shoji ; Saito, Sakuyoshi ; Ohtsuka, N. ; Matsukawa, N. ; Mori, Shinsuke ; Arai, Nobuyuki ; Kaneko, Yuya ; Yoshikawa, Kenichi ; Matsunaga, J. ; Iizuka, Tetsuya
Author_Institution :
Toshiba Semiconductor Device Engineering Lab, Kawasaki, Japan
Abstract :
A 512K×8b EPROM fabricated in 0.8μm, CMOS with a cell size of 9μm2and a chip size of 5.9×14.9mm2will be reported. The device programs at a rate of 10μs per byte, reads with an access time of 120ns and draws 10mA of active current.
Keywords :
Circuit testing; Costs; Delay effects; EPROM; Laser beam cutting; Laser modes; Memory; Microcomputers; Monitoring; Plastic packaging;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157230
