Investigation of strain effects on performance of high-speed Schottky-type photodetectors

Author

Oh, Kyoung-Hwan ; Jo, Seong-June ; In, Soo-Kang ; Jun, Dong-Hwan ; Song, Jong-In

Author_Institution

Dept. of Inf. & Commun., K-JIST, Gwangju, South Korea

fYear

2002

fDate

5-8 Nov. 2002

Firstpage

157

Lastpage

160

Abstract

PIN and Schottky photodetectors (PDs) having an InGaAs absorption layer are widely used for long distance optical communication. The speed of those PDs is generally limited by hole transition time in the absorption layer. This limit can be overcome by using a tensile-strain In_xGa_1-xAs (x<0.53) absorption layer. We fabricated and characterized Schottky-type PDs having a lattice-matched In_0.53Ga_0.47As absorption layer and a tensile-strained In_0.48Ga_0.52As absorption layer. Photocurrent impulse response of the tensile-strained InAlAs/In_0.48Ga_0.52As PD showed an improved FWHM of 13 ps, while that of the the lattice-matched InAlAs/In_0.53Ga_0.47As PD was 16 ps.

Keywords

Schottky barriers; light absorption; optical communication equipment; photodetectors; photoluminescence; transient response; 13 ps; 16 ps; InAlAs-In_0.48Ga_0.52; InAlAs-In_0.53Ga_0.47As; InGaAs absorption layer; Schottky-type photodetectors; high-speed photodetector performance; hole transition time; lattice-matched absorption layer; long distance optical communication; photocurrent impulse response; strain effects; tensile-strain In_xGa_1-xAs absorption layer; Optical communication equipment; Optical propagation in absorbing media; Photodetectors; Photoluminescence; Schottky barriers; Transient response;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2002. International Topical Meeting on

Print_ISBN

4-88552-187-4

Type

conf

DOI

10.1109/MWP.2002.1158884

Filename

1158884