Analysis of the proton induced permanent degradation in an optocoupler

Author

Germanicus, R. ; Dusseau, L. ; Saigné, F. ; Barde, S. ; Ecoffet, R. ; Mion, O. ; Calvel, P. ; Fesquet, J. ; Gasiot, J.

Author_Institution

Universiti Montpellier II, France

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

161

Lastpage

165

Abstract

We have studied the effect of proton irradiation with energies from 21 MeV to 200 MeV on commercial optocouplers. The basic degradation mechanisms for such devices are reviewed. Our experimental results are described. Using the concept of displacement damage dose, we propose a new approach to analyze the results.

Keywords

III-V semiconductors; elemental semiconductors; integrated optoelectronics; light emitting diodes; optical couplers; optical interconnections; photodiodes; phototransistors; proton effects; radiation hardening (electronics); silicon; 21 to 200 MeV; III-V semiconductor; LED emitter; Si; commercial optocouplers; degradation mechanisms; displacement damage dose; optocoupler; photodiode; proton induced permanent degradation; proton irradiation; review; silicon phototransistor; Aerospace industry; Degradation; Light emitting diodes; Low earth orbit satellites; Optoelectronic devices; Phototransistors; Protons; Semiconductor devices; Silicon; Space missions;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159274

Filename

1159274