Title :
Passive mode locking of InAlGaAs 1.3 μm extended cavity lasers fabricated by quantum well intermixing
Author :
Robert, F. ; Bryce, A.C. ; Marsh, J.H. ; Thorpe, A. J Spring ; White, J.K.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
We report on the passive mode locking of InGaAlAs strained quantum well extended cavity lasers emitting at 1.3 μm. The passive section is made by quantum well intermixing.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mode locking; laser transitions; quantum well lasers; 1.3 micron; InAlGaAs 1.3 μm extended cavity lasers; InGaAlAs; InGaAlAs strained quantum well extended cavity lasers; passive laser mode locking; passive section; quantum well intermixing; Laser mode locking; Optical materials; Optical pulse generation; Photonic band gap; Protection; Quantum well lasers; Radio frequency; Rapid thermal annealing; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159507
