Title :
Investigation of spectral gain broadening for mode-locking using InGaAs/InAlGaAs multiple width quantum wells at 1550 nm
Author :
Jain, M. ; McCulloch, M. ; Langford, N. ; Bryce, A.C. ; Ironside, C.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Compared to conventional, identical width quantum well (IWQW) material, we have broadened the gain spectrum by around 35% using multiple width quantum well (MWQW) material. For colliding pulse mode-locked laser, pulse width shortening of around 9.2% is obtained for the MWQW device in comparison to the IWQW device.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mode locking; laser transitions; quantum well lasers; spectral line broadening; 1550 nm; InGaAs-InAlGaAs; InGaAs/InAlGaAs multiple width quantum well lasers; MWQW device; colliding pulse mode-locked laser; gain spectrum broadening; identical width quantum well laser material; laser mode-locking; pulse width shortening; spectral gain broadening; Indium gallium arsenide; Laser mode locking; Optical materials; Optical pulses; Pulse measurements; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Space vector pulse width modulation; Tellurium;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159508
