Title :
Tunable mode-locked semiconductor laser with Bragg mirror external cavity
Author :
Yvind, K. ; Jørgensen, T. ; Birkedal, D. ; Skovgaard, P.M.W. ; Hanberg, Jesper
Author_Institution :
COM Center, Lyngby, Denmark
Abstract :
We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have shown the potential of a tuning range above 100 nm in a single mechanical stable device.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser mirrors; laser mode locking; laser tuning; quantum well lasers; 10 GHz; 4 to 6 ps; Bragg mirror external cavity; GaAs-AlGaAs; simplified design; single mechanical stable device; tunability; tunable mode-locked semiconductor laser; tuning range; wavelength tunable external cavity mode-locked laser; wedged GaAs/AlGaAs Bragg mirror; Bandwidth; Gallium arsenide; Laser mode locking; Laser tuning; Mirrors; Optical design; Optical pulses; Reflectivity; Semiconductor lasers; Tunable circuits and devices;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159544
