Impact of Frequency-Dependent and Nonlinear Parameters on Transient Analysis of Through Silicon Vias Equivalent Circuit

Author

Piersanti, Stefano ; de Paulis, Francesco ; Orlandi, Antonio ; Jun Fan

Author_Institution

Dept. of Ind. & Inf. Eng. & Econ., UAq EMC Lab., L´Aquila, Italy

Volume

57

Issue

3

fYear

2015

fDate

Jun-15

Firstpage

538

Lastpage

545

Abstract

This paper introduces an equivalent circuit model for through silicon vias including the nonlinear effect of metal-oxide-semiconductor capacitance. This nonlinear effect is combined to the frequency-dependent via resistance and inductance, as well as capacitance and conductance of the silicon substrate for a transient analysis. The impact of frequency-dependent RLCG parameters and the nonlinear depletion capacitance on signal propagation, crosstalk and eye diagram is studied using the proposed equivalent circuit model.

Keywords

MOS integrated circuits; capacitance; crosstalk; equivalent circuits; integrated circuit modelling; three-dimensional integrated circuits; transient analysis; Si; conductance; crosstalk; equivalent circuit model; eye diagram; frequency-dependent RLCG parameters; frequency-dependent parameters; inductance; metal-oxide- semiconductor capacitance; nonlinear depletion capacitance; nonlinear effect; nonlinear parameters; resistance; signal propagation; silicon substrate; silicon vias equivalent circuit; transient analysis; Capacitance; Equivalent circuits; Integrated circuit modeling; Silicon; Substrates; Through-silicon vias; Transient analysis; Crosstalk; equivalent circuit models; frequency-dependent parameters; nonlinear depletion (ND) capacitance; signal integrity; through silicon vias (TSV);

fLanguage

English

Journal_Title

Electromagnetic Compatibility, IEEE Transactions on

Publisher

ieee

ISSN

0018-9375

Type

jour

DOI

10.1109/TEMC.2015.2391911

Filename

7024126