Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 ${\rm cm}^{2}/{\rm Vs}$

Polycrystalline zinc oxide (ZnO) thin-film transistors with a Ta₂O₅ high- k gate dielectric layer are fabricated by radio-frequency magnetron sputtering at room temperature. Under the optimal deposition conditions, the devices show saturation mobility values over 50 cm²/Vs, an ON/OFF ratio of , and a subthreshold voltage swing of 0.29 V/decade at a low operating voltage of 4 V. This is, to the best of our knowledge, one of the highest field-effect mobility values achieved in ZnO-based thin-film transistors by room-temperature sputtering. The stability of the devices is also examined and the sensitive dependence of the carrier mobility on the deposition conditions is discussed.