DocumentCode
388990
Title
Pulsed coherent semiconductor Ka-band transmitters
Author
Karushkin, N.F. ; Kasatkin, L.V. ; Khitrovsky, V.A.
Author_Institution
State Enterprise "Orion", Kiev, Ukraine
fYear
2001
fDate
14-14 Sept. 2001
Firstpage
26
Lastpage
28
Abstract
The development of pulsed coherent semiconductor transmitters for the millimeter wave range has made possible the creation of a new generation of short distance radars having high resolution and interference immunity. This paper presents the results of the design and production of high power pulsed coherent Ka-band semiconductor transmitters having high frequency stability, low phase noise and fast frequency switching.
Keywords
IMPATT diodes; circuit stability; millimetre wave circuits; phase noise; radar transmitters; 32 to 37 GHz; 50 to 100 W; EHF; IMPATT diode combiners; Ka-band semiconductor transmitters; fast frequency switching; high frequency stability; high interference immunity; high power Ka-band transmitters; high resolution; injection-locking mode; low phase noise; millimeter wave range; pulsed coherent Ka-band transmitters; short distance radars;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-00-6
Type
conf
Filename
1173696
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