Title :
Low noise C-band amplifier
Author :
Alybin, V.G. ; Zyablikov, S.Y. ; Parusov, A.A. ; Blinov, E.Y.
Author_Institution :
FSUE SPO ORION, Moscow, Russia
Abstract :
The results of design of low noise amplifier for C-band satcom stations are presented. 40 K of noise temperature and more than 60 dB gain have been obtained in 500 MHz bandwidth with WSVR less than 1.2. The amplifier includes four stages: amplifier, DC linear controller of supply voltage, low noise regulated GaAs FET bias and matching circuits. Minimal number of construction units ensures high reliability and low cost of serial production.
Keywords :
integrated circuit noise; microwave amplifiers; microwave integrated circuits; satellite communication; 40 K; 40K noise temperature; 500 MHz; 500MHz bandwidth; 60 dB; 60dB gain; C-band satcom stations; GaAs FET; WSVR below 1.2; low noise amplifier;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
