• DocumentCode
    389016
  • Title

    Some circuit aspects of low noise microwave amplifier design

  • Author

    Krutov, A.V. ; Mitlin, V.A. ; Rebrov, A.S.

  • Author_Institution
    FSUC SRC "Istok, Fryazino, Russia
  • fYear
    2001
  • fDate
    14-14 Sept. 2001
  • Firstpage
    123
  • Lastpage
    125
  • Abstract
    Several techniques exist concerning the design of low-noise microwave amplifiers. Presented in this paper are the results of the design of low-noise microwave amplifier using GaAs Schottky barrier FETs. The possibility of the achievement of a minimum noise figure for different amplifiers is shown.
  • Keywords
    III-V semiconductors; MESFET circuits; circuit noise; gallium arsenide; microwave amplifiers; GaAs; GaAs MESFET; GaAs Schottky barrier FETs; low-noise microwave amplifiers; microwave LNA design; minimum noise figure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-7968-00-6
  • Type

    conf

  • Filename
    1173727
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=389016