Title :
GaAs microwave power offset gate MESFETs
Author :
Lapin, V.G. ; Ternnov, A.M. ; Krasnik, V.A. ; Petrov, K.I.
Author_Institution :
State Res. & Production Corp. Istok, Friazino, Russia
Abstract :
Describes microwave power transistors, developed in SRPC "Istok". Characteristics of power GaAs MESFETs and their applications are presented. Power MESFETs have output power density of 0.5 W/mm, power-added efficiency of 35% and thermal resistance of 10-12/spl deg/C/W (for MESFET with total gate width of 4 mm).
Keywords :
III-V semiconductors; gallium arsenide; microwave field effect transistors; microwave power transistors; power field effect transistors; thermal resistance; 35 percent; 4 mm; GaAs; III V semiconductors; Istok; SRPC; microwave power offset gate MESFETs; output power density; power-added efficiency; thermal resistance; total gate width;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
