DocumentCode
389028
Title
Ka-band power amplifier with series connected GaAs IMPATT diodes
Author
Kosov, A.S. ; Zotov, V.A. ; Borovski, R.E. ; Korogod, V.V. ; Skulachev, D.P. ; Vald-Perlov, V.M.
Author_Institution
Space Res. Inst., Acad. of Sci., Moscow, Russia
fYear
2001
fDate
14-14 Sept. 2001
Firstpage
155
Lastpage
157
Abstract
In order to improve the performance of mm-wave IMPATT diode amplifiers, the series diode connection has been effectively used. Series connection of diodes at AC and their parallel connection at DC have been realized in a two-diode balance circuit. The amplifier circuit minimizes losses and overcomes impedance restriction of millimeter wave IMPATTs. The practical amplifier possessed near 100% combining efficiency at 36 GHz and had about 0.9 W output power at 15% power added efficiency.
Keywords
III-V semiconductors; IMPATT amplifiers; gallium arsenide; millimetre wave amplifiers; millimetre wave circuits; power combiners; 0.9 W; 100 percent; 15 percent; 36 GHz; GaAs; III V semiconductors; Ka-band; combining efficiency; impedance restriction; mm-wave diode amplifiers; output power; parallel connection; power added efficiency; series connected IMPATT diodes; series diode connection; two-diode balance circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-00-6
Type
conf
Filename
1173749
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