Title :
Ka-band power amplifier with series connected GaAs IMPATT diodes
Author :
Kosov, A.S. ; Zotov, V.A. ; Borovski, R.E. ; Korogod, V.V. ; Skulachev, D.P. ; Vald-Perlov, V.M.
Author_Institution :
Space Res. Inst., Acad. of Sci., Moscow, Russia
Abstract :
In order to improve the performance of mm-wave IMPATT diode amplifiers, the series diode connection has been effectively used. Series connection of diodes at AC and their parallel connection at DC have been realized in a two-diode balance circuit. The amplifier circuit minimizes losses and overcomes impedance restriction of millimeter wave IMPATTs. The practical amplifier possessed near 100% combining efficiency at 36 GHz and had about 0.9 W output power at 15% power added efficiency.
Keywords :
III-V semiconductors; IMPATT amplifiers; gallium arsenide; millimetre wave amplifiers; millimetre wave circuits; power combiners; 0.9 W; 100 percent; 15 percent; 36 GHz; GaAs; III V semiconductors; Ka-band; combining efficiency; impedance restriction; mm-wave diode amplifiers; output power; parallel connection; power added efficiency; series connected IMPATT diodes; series diode connection; two-diode balance circuit;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
