Investigation of nanocontact electron properties to the semiconductor islands

Author

Vostokov, N.V. ; Dryakhlushin, V.F. ; Klimov, Alexander Yu ; Novikov, A.V. ; Khrykin, O.I. ; Shashkin, V.I.

Author_Institution

Inst. for Phys. of Microstructures RAS, Nizhny Novgorod, Russia

fYear

2001

fDate

14-14 Sept. 2001

Firstpage

420

Lastpage

421

Abstract

Distribution of charge in semiconductor islands of InAs on GaAs surface and Ge/sub x/Si/sub 1-x/ on Si surface are investigated by atomic-force microscopy method with using conductor probes. Carriers of charge are concentrated on the islands perimeter that are shown in rough current peaks in this regions. Reason of this effect are indicated. Nanodimensional contact with /spl sim/10/sup -2/ mkm/sup 2/ area to single islands are fabricated, its current-voltage characteristics are investigated.

Keywords

Ge-Si alloys; III-V semiconductors; atomic force microscopy; carrier density; elemental semiconductors; gallium arsenide; indium compounds; island structure; nanotechnology; semiconductor junctions; semiconductor materials; silicon; GaAs surface; Ge/sub x/Si/sub 1-x/; GeSi-Si; InAs; InAs-GaAs; Si surface; atomic force microscopy; carrier concentration; charge distribution; conducting probe; current-voltage characteristics; nanocontact electron properties; semiconductor islands;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on

Conference_Location

Sevastopol, Crimea, Ukraine

Print_ISBN

966-7968-00-6

Type

conf

Filename

1173903