• DocumentCode
    389127
  • Title

    Development of back-to-back connected edge diodes for THz multipliers

  • Author

    Shashkin, V.I. ; Vaks, V.L. ; Vopilkin, Evgeny A. ; Daniltsev, V.M. ; Klimov, Alexander Yu ; Kuznetsov, M.I. ; Murel, A.V. ; Rogov, Vladimir V. ; Khrykin, O.I.

  • Author_Institution
    Inst. for Phys. of Microstructures RAS, Nizhny Novgorod, Russia
  • fYear
    2001
  • fDate
    14-14 Sept. 2001
  • Firstpage
    430
  • Lastpage
    431
  • Abstract
    A technology for fabrication of back-to-back connected diodes with edge (nonplanar) Schottky contacts to epitaxial layer (or heterolayers) on semi-insulating GaAs substrate has been developed. A concept of THz frequency multipliers on their basis has been formulated. The results of the structure design, test measurements and experiments are presented.
  • Keywords
    III-V semiconductors; Schottky diodes; frequency multipliers; gallium arsenide; submillimetre wave diodes; GaAs; THz frequency multiplier; back-to-back connected edge diode; epitaxial layer; fabrication technology; heterolayer; nonplanar Schottky contact; semi-insulating GaAs substrate;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-7968-00-6
  • Type

    conf

  • Filename
    1173913
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=389127