DocumentCode :
389152
Title :
Local transformations of thin BN films under the action of STM probe
Author :
Frolov, V.D. ; Ageyev, V.P. ; Konov, V.I.
Author_Institution :
Gen. Phys. Inst., Acad. of Sci., Moscow#, Russia
fYear :
2001
fDate :
14-14 Sept. 2001
Firstpage :
496
Lastpage :
497
Abstract :
Local transformations of mixed cubic/hexagonal BN films under the action of electric field of STM probe have been observed. If a magnitude of voltage pulses U/sub bias/ exceeded a threshold value, the STM action results in a local conducting protrusion with a height of the 10% film thickness, and a lateral size of about the film thickness. The film was peeled off the substrate at high voltages. It was noted that the films exposed to X-rays which shown more elastic properties. Possible mechanism of the observed film transformations is discussed.
Keywords :
III-V semiconductors; X-ray effects; boron compounds; scanning tunnelling microscopy; solid-state phase transformations; wide band gap semiconductors; BN; STM probe; X-ray effects; cubic hexagonal BN films; elastic properties; electric field; film thickness; local conducting protrusion; local transformations; microvacuum devices; permanent storage; threshold value; voltage pulses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
Type :
conf
Filename :
1173945
Link To Document :
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