• DocumentCode
    389152
  • Title

    Local transformations of thin BN films under the action of STM probe

  • Author

    Frolov, V.D. ; Ageyev, V.P. ; Konov, V.I.

  • Author_Institution
    Gen. Phys. Inst., Acad. of Sci., Moscow#, Russia
  • fYear
    2001
  • fDate
    14-14 Sept. 2001
  • Firstpage
    496
  • Lastpage
    497
  • Abstract
    Local transformations of mixed cubic/hexagonal BN films under the action of electric field of STM probe have been observed. If a magnitude of voltage pulses U/sub bias/ exceeded a threshold value, the STM action results in a local conducting protrusion with a height of the 10% film thickness, and a lateral size of about the film thickness. The film was peeled off the substrate at high voltages. It was noted that the films exposed to X-rays which shown more elastic properties. Possible mechanism of the observed film transformations is discussed.
  • Keywords
    III-V semiconductors; X-ray effects; boron compounds; scanning tunnelling microscopy; solid-state phase transformations; wide band gap semiconductors; BN; STM probe; X-ray effects; cubic hexagonal BN films; elastic properties; electric field; film thickness; local conducting protrusion; local transformations; microvacuum devices; permanent storage; threshold value; voltage pulses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-7968-00-6
  • Type

    conf

  • Filename
    1173945