Temperature dependence of reverse breakdown voltages of n+p Si ultra shallow junctions

It is demonstrated that the dependence of the reverse breakdown voltage (V_B) on the ambient temperature (T) of modern shallow and ultra-shallow Si pn junctions, required for future ULSI scaled down devices, is drastically changed, with respect to that of the deeper, conventional Si pn junctions reported so far. In this work it is shown that unlike the conventional junctions in which the dV_B/dT sign was determined by the dopant concentrations, in the present ultrashallow Si junctions, dVB/dT cm have positive, negative and zero slopes, in the same junction, almost independent of the dopant concentration.