Title :
A 1.2-v 2.4-GHz 0. 18 μm CMOS low noise amplifier
Author :
Hu, Wei ; Guo, Yawei ; Qiu, Zujiang ; Yang, Lianxing
Author_Institution :
ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China
fDate :
29 June-1 July 2002
Abstract :
A 1.2V 0.18 μm CMOS LNA for Bluetooth applications has been designed and simulated. Under such a low supply voltage, the single-tone LNA has been simulated, it provides a series of good results in noise figure, linearity and power consumption. The LNA achieves a power gain (S21) of 15.16 dB, noise figure of 2.778 dB and power dissipation of 7.76 mW. Besides, the input third-order intercept (IIP3) is 1.188 dBm, the input 1 dB compression point is -8.73 dBm, and the reverse isolation (S12) is -30.6 dB.
Keywords :
Bluetooth; CMOS integrated circuits; UHF power amplifiers; integrated circuit design; low-power electronics; radio equipment; 0.18 micron; 1.2 V; 15.16 dB; 2.778 dB; 7.76 mW; Bluetooth; CMOS LNA; CMOS low noise amplifier; input third-order intercept; linearity; low supply voltage; noise figure; power consumption; power dissipation; power gain; reverse isolation; single-tone LNA; Bandwidth; Bluetooth; Circuit simulation; Frequency; Impedance; Inductors; Low-noise amplifiers; Noise figure; Resistors; Voltage;
Conference_Titel :
Communications, Circuits and Systems and West Sino Expositions, IEEE 2002 International Conference on
Print_ISBN :
0-7803-7547-5
DOI :
10.1109/ICCCAS.2002.1180661
