A 1.2-v 2.4-GHz 0. 18 μm CMOS low noise amplifier

Author

Hu, Wei ; Guo, Yawei ; Qiu, Zujiang ; Yang, Lianxing

Author_Institution

ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China

Volume

1

fYear

2002

fDate

29 June-1 July 2002

Firstpage

470

Abstract

A 1.2V 0.18 μm CMOS LNA for Bluetooth applications has been designed and simulated. Under such a low supply voltage, the single-tone LNA has been simulated, it provides a series of good results in noise figure, linearity and power consumption. The LNA achieves a power gain (S21) of 15.16 dB, noise figure of 2.778 dB and power dissipation of 7.76 mW. Besides, the input third-order intercept (IIP3) is 1.188 dBm, the input 1 dB compression point is -8.73 dBm, and the reverse isolation (S12) is -30.6 dB.

Keywords

Bluetooth; CMOS integrated circuits; UHF power amplifiers; integrated circuit design; low-power electronics; radio equipment; 0.18 micron; 1.2 V; 15.16 dB; 2.778 dB; 7.76 mW; Bluetooth; CMOS LNA; CMOS low noise amplifier; input third-order intercept; linearity; low supply voltage; noise figure; power consumption; power dissipation; power gain; reverse isolation; single-tone LNA; Bandwidth; Bluetooth; Circuit simulation; Frequency; Impedance; Inductors; Low-noise amplifiers; Noise figure; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems and West Sino Expositions, IEEE 2002 International Conference on

Print_ISBN

0-7803-7547-5

Type

conf

DOI

10.1109/ICCCAS.2002.1180661

Filename

1180661