DocumentCode :
39171
Title :
Total Dose Effects in Tunnel-Diode Body-Contact SOI 
MOSFETs
Author :
Jiexin Luo ; Jing Chen ; Zhan Chai ; Kai Lu ; Weiwei He ; Yan Yang ; En Xia Zhang ; Fleetwood, D.M. ; Xi Wang
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Volume :
61
Issue :
6
fYear :
2014
fDate :
Dec. 2014
Firstpage :
3018
Lastpage :
3022
Abstract :
Tunnel-Diode Body-Contact (TDBC) SOI MOSFETs utilize a shallow source and a deep drain to eliminate total-ionizing-dose induced back-channel leakage and to suppress floating body effects. In contrast, significant leakage current is observed in T-gate Body-Contact (TB) SOI nMOSFETs, as a result of trapped charge in the buried oxide. A subthreshold hump is observed in TDBC SOI nMOSFETs after irradiation. The charge trapped at the shallow trench isolation (STI) corner is the major reason for the post-irradiation hump in the current-voltage characteristics. Pocket p+ implantation reduces the size of the subthreshold hump in short-channel TDBC devices.
Keywords :
MOSFET; elemental semiconductors; leakage currents; radiation hardening (electronics); silicon-on-insulator; tunnel diodes; STI corner; Si; T-gate body-contact SOI nMOSFET; TDBC SOI MOSFET; back-channel leakage; buried oxide; floating body effects; leakage current; pocket p+ implantation; post-irradiation hump; shallow trench isolation corner; total dose effects; total-ionizing-dose; trapped charge; tunnel-diode body-contact SOI nMOSFET; CMOS integrated circuits; Leakage currents; MOSFET; Radiation effects; Silicon-on-insulator; Body contact; Tunnel-Diode Body-Contact (TDBC); partially depleted SOI; total dose effect;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2364923
Filename :
6954577
Link To Document :
