Title :
A 1V CMOS power amplifier for Bluetooth applications
Author :
Ho, K.W. ; Luong, H.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A two-stage power amplifier operated at 2.4GHz has been designed and fabricated in a standard 0.35μm CMOS technology. A common-gate Class E power amplifier is employed. A common-gate switch is suitable for low supply voltage operation without degrading the PAE. A pre-amplifier with positive feedback configuration is used to drive the common-gate output stage. The amplifier delivers 18dBm output power with 33% power-added efficiency (PAE) under a 1V supply voltage. With a 1.2V supply, the amplifier delivers 20dBm output power with 35% PAE and can be integrated for class 1 Bluetooth application.
Keywords :
Bluetooth; CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; feedback amplifiers; low-power electronics; 0.35 micron; 1 V; 1.2 V; 2.4 GHz; 33 percent; 35 percent; Bluetooth applications; CMOS power amplifier; PAE; common-gate Class E power amplifier; common-gate output stage; common-gate switch; low supply voltage operation; output power; positive feedback configuration; power-added efficiency; pre-amplifier; two-stage power amplifier; Bluetooth; CMOS technology; Degradation; High power amplifiers; Low voltage; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switches; Voltage-controlled oscillators;
Conference_Titel :
Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on
Print_ISBN :
0-7803-7523-8
DOI :
10.1109/MWSCAS.2002.1186897
