Title :
Improving large-signal FET/HEMT model accuracy by optimization of diode response
Author :
Johnson, J. ; Branner, G.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Abstract :
In this paper, a simple technique for measuring and modeling the response of the gate-source and gate-drain diodes in a large-signal FET/HEMT model is presented. Measurements are conducted on an ATF36163 PHEMT transistor, and significant improvement in a large-signal model for the PHEMT is achieved by optimizing the response of the diode models. The significance of the gate-source and gate-drain diodes in large-signal modeling is discussed.
Keywords :
field effect transistors; high electron mobility transistors; semiconductor device breakdown; semiconductor device models; HEMT model; PHEMT transistor; diode models; diode response; gate-drain diodes; gate-source diodes; large-signal FET model; large-signal modeling; model accuracy; Current measurement; Electrical resistance measurement; Equations; Equivalent circuits; FETs; HEMTs; PHEMTs; Roentgenium; Semiconductor diodes; Voltage;
Conference_Titel :
Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on
Print_ISBN :
0-7803-7523-8
DOI :
10.1109/MWSCAS.2002.1186943
