DocumentCode :
391818
Title :
Technology migration effects on signal integrity of single on-chip interconnect
Author :
Ghali, Hani
Author_Institution :
Fac. of Eng., Ain Shams Univ., Cairo, Egypt
Volume :
3
fYear :
2002
fDate :
4-7 Aug. 2002
Abstract :
A full-wave electromagnetic "EM" solver has been used to investigate the effects of technology migration on signal integrity parameters for a single on-chip interconnects. In addition, the effects of using new interconnect materials and/or low-κ dielectrics have also been investigated. The EM solver has been used to calculate the electromagnetic quantities "S parameters" for the single on-chip interconnect, which are then transformed to an "RLCG" transmission-line equivalent circuit model. Consequently, a SPICE-like simulator is used to evaluate the signal integrity parameters.
Keywords :
S-parameters; SPICE; equivalent circuits; integrated circuit interconnections; integrated circuit modelling; transmission line theory; RLCG transmission line equivalent circuit model; S-parameters; SPICE simulation; full-wave electromagnetic EM solver; low-κ dielectric; signal integrity; single on-chip interconnect; technology migration; Circuit simulation; Data mining; Dielectric materials; Equivalent circuits; Frequency; Integrated circuit interconnections; Parasitic capacitance; Signal design; Transmission lines; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on
Print_ISBN :
0-7803-7523-8
Type :
conf
DOI :
10.1109/MWSCAS.2002.1186994
Filename :
1186994
Link To Document :
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