Technology migration effects on signal integrity of single on-chip interconnect

Author

Ghali, Hani

Author_Institution

Fac. of Eng., Ain Shams Univ., Cairo, Egypt

Volume

3

fYear

2002

fDate

4-7 Aug. 2002

Abstract

A full-wave electromagnetic "EM" solver has been used to investigate the effects of technology migration on signal integrity parameters for a single on-chip interconnects. In addition, the effects of using new interconnect materials and/or low-κ dielectrics have also been investigated. The EM solver has been used to calculate the electromagnetic quantities "S parameters" for the single on-chip interconnect, which are then transformed to an "RLCG" transmission-line equivalent circuit model. Consequently, a SPICE-like simulator is used to evaluate the signal integrity parameters.

Keywords

S-parameters; SPICE; equivalent circuits; integrated circuit interconnections; integrated circuit modelling; transmission line theory; RLCG transmission line equivalent circuit model; S-parameters; SPICE simulation; full-wave electromagnetic EM solver; low-κ dielectric; signal integrity; single on-chip interconnect; technology migration; Circuit simulation; Data mining; Dielectric materials; Equivalent circuits; Frequency; Integrated circuit interconnections; Parasitic capacitance; Signal design; Transmission lines; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on

Print_ISBN

0-7803-7523-8

Type

conf

DOI

10.1109/MWSCAS.2002.1186994

Filename

1186994