Comparison of analytic and numerical models with commercially available simulation tools for the prediction of semiconductor freeze-out and exhaustion

Author

Pieper, Ron ; Michael, Sherif ; Reeves, Derek

Author_Institution

Dept. of Electr. & Comput. Eng., Naval Postgraduate Sch., Monterey, CA, USA

Volume

1

fYear

2002

fDate

4-7 Aug. 2002

Abstract

Currently, commercial software packages, such as available through Silvaco International, are well designed to solve the electron/hole transport problem. This type of calculation is usually required to predict the device IV characteristic. Surprisingly, using the same package, to obtain a temperature dependent plot for majority carrier concentration for a uniform semiconductor requires a somewhat complicated procedure. Our paper will present an efficient novel way of obtaining this curve from the Silvaco International software and compare the results with a proposed one dimensional single-equation analytic model and a numerical model that predict the temperature dependence for majority concentration in all regimes.

Keywords

carrier density; semiconductor device models; Silvaco International software package; computer simulation; device I-V characteristics; electron transport; hole transport; majority carrier concentration; numerical model; one-dimensional analytical model; semiconductor exhaustion; semiconductor freeze-out; temperature dependence; Analytical models; Charge carrier processes; Computational modeling; Computer simulation; Impurities; Numerical models; Predictive models; Semiconductor device packaging; Software packages; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on

Print_ISBN

0-7803-7523-8

Type

conf

DOI

10.1109/MWSCAS.2002.1187148

Filename

1187148