Title :
27 GHz monolithically integrated VCO with frequency divider in SiGe bipolar technology
Author :
Ritzberger, Günter ; Bock, Josef
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
This paper presents a monolithic voltage-controlled oscillator with static frequency divider in a pre-production 0.4 μm SiGe bipolar technology for broadband communication applications. The voltage-controlled oscillator operates from 21 GHz to 27 GHz. The division ratio of the static frequency divider is 16. The circuit consumes 500 mW from the 5 V supply including the two output buffers.
Keywords :
Ge-Si alloys; MMIC frequency convertors; MMIC oscillators; bipolar MMIC; frequency dividers; semiconductor materials; voltage-controlled oscillators; 0.4 micron; 21 to 27 GHz; 5 V; 500 mW; SiGe; SiGe bipolar technology; broadband communication; monolithic integration; static frequency divider; voltage controlled oscillator; Circuits; Differential amplifiers; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Phase detection; Phase frequency detector; Phase locked loops; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187635
