DocumentCode :
392602
Title :
Thermoelectric properties of n-type polycrystalline BixSb2-xTe3 alloys
Author :
Gerovac, N. ; Snyder, G.I. ; Caillat, T.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear :
2002
fDate :
25-29 Aug. 2002
Firstpage :
31
Lastpage :
34
Abstract :
(BixSb1-x)2Te3 (.5≤x≤.7) polycrystalline samples were synthesized using a combination of melting and powder metallurgy techniques. The samples were hot pressed in graphite dies and cut perpendicular and parallel to the pressing direction. Samples were examined by microprobe analysis to determine their atomic composition. The thermoelectric properties were measured at room temperature in both directions. These properties include Seebeck coefficient, thermal conductivity, electrical resistivity, and Hall effect. The thermoelectric figure-of-merit, ZT, was calculated from these properties. The best ZT was ∼.5, given by annealed (Bi.7Sb.3)2Te3. Selected samples were also annealed at various temperatures in an attempt to optimize ZT. The annealing substantially impacted the thermoelectric properties due to a combination of improved crystallinity and changes in defect concentration. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.
Keywords :
Hall effect; Seebeck effect; annealing; antimony compounds; bismuth compounds; electrical resistivity; semiconductor materials; thermal conductivity; 300 K; BiSb2Te3; Hall effect; Seebeck coefficient; ZT; advanced thermoelectric unicouples; annealing; crystallinity; defect concentration; electrical resistivity; microprobe analysis; n-type polycrystalline BixSb2-xTe3 alloys; thermal conductivity; thermoelectric figure-of-merit; thermoelectric properties; Annealing; Atomic measurements; Bismuth; Powders; Pressing; Tellurium; Temperature measurement; Thermal conductivity; Thermal resistance; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN :
0-7803-7683-8
Type :
conf
DOI :
10.1109/ICT.2002.1190259
Filename :
1190259
Link To Document :
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