Title :
Pixel Architecture for Low-Power Liquid Crystal Display Comprising Oxide and Ferroelectric Memory Thin Film Transistors
Author :
Seung-Hyuck Lee ; Jongbin Kim ; Seong Ho Yoon ; Kyeong-Ah Kim ; Sung-Min Yoon ; Chunwon Byun ; Chi-Sun Hwang ; Gi Heon Kim ; Kyoung-Ik Cho ; Seung-Woo Lee
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
Abstract :
A new pixel architecture and driving scheme for a low-power liquid crystal display (LCD) with a low refresh-rate is proposed. The proposed pixel architecture comprises two oxide thin-film transistors (Ox-TFTs), two ferroelectric memory TFTs (Fe-MTFTs), and two capacitors. Both TFTs have the same indium gallium zinc oxide film as an active layer. The Fe-MTFT exhibits a hysteresis property owing to the ferroelectric gate insulator that enables it to operate as a memory. A prototype LCD with 6 × 5 pixels is fabricated in this letter. The fieldeffect mobility of Ox-TFTs is 11 cm2V-1s-1. The memory window of Fe-MTFT is 5 V with a gate-voltage sweep from -20 to 20 V. After programming the Fe-MTFTs, the fabricated LCD successfully operates at a 0.5-Hz refresh-rate.
Keywords :
ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; insulation; liquid crystal displays; thin film capacitors; thin film transistors; Fe-MTFT; LCD; Ox-TFT; capacitors; driving scheme; ferroelectric gate insulator; ferroelectric memory thin film transistor; field-effect mobility; frequency 0.5 Hz; gate-voltage sweep; hysteresis property; low-power liquid crystal display; oxide thin-film transistor; pixel architecture; voltage -20 V to 20 V; Insulators; Liquid crystal displays; Logic gates; Metals; Power demand; Programming; Thin film transistors; Ferroelectric TFT; Low-power liquid crystal display; Low-power liquid crystal display,; Oxide TFT; ferroelectric TFT; oxide TFT;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2424216