Title :
Efficient surface passivation by silicon nitride using a large area deposition system
Author :
Kintzel, W. ; Bail, M. ; Auer, R. ; Brendel, R.
Author_Institution :
Bavarian Center for Appl. Energy Res., Erlangen, Germany
Abstract :
We demonstrate high quality surface passivation of Si wafers with silicon nitride films deposited on an area of 40×40 cm2 in a remote plasma-enhanced chemical vapor deposition system. We deposit silicon nitride films on both sides of the wafers at various temperatures and source gas pressures. Lifetime measurements yield a surface recombination velocity of Seff = 32 cm/s using Si wafers with a resistivity of 1.4 Ωcm. The standard deviation of Seff is as small as 4 cm/s over the area of 40×40 cm2.
Keywords :
carrier lifetime; electrical resistivity; elemental semiconductors; passivation; plasma CVD; semiconductor growth; silicon; silicon compounds; solar cells; surface recombination; 1.4 ohmcm; 32 cm/s; 40 cm; Si wafers; SiN-Si; efficient surface passivation; high quality surface passivation; large area deposition system; lifetime measurements; remote plasma-enhanced chemical vapor deposition system; resistivity; silicon nitride films; source gas pressures; standard deviation; surface recombination velocity; thin-film silicon solar cells; Chemical vapor deposition; Conductivity; Lifetime estimation; Passivation; Plasma chemistry; Plasma measurements; Plasma sources; Plasma temperature; Semiconductor films; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190508
