• DocumentCode
    392633
  • Title

    Narrower efficiency distribution for multicrystalline silicon solar cells by double-side emitter diffusion

  • Author

    Goris, M.J.A.A. ; Weeber, A.W. ; Bultman, J.H.

  • Author_Institution
    ECN Solar Energy, Petten, Netherlands
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    379
  • Lastpage
    382
  • Abstract
    Multicrystalline silicon solar cells produced with double side emitter diffusion are compared with single side emitter diffused cells. Double side emitter diffusion yields in improved current and voltage for all materials of four multicrystalline silicon wafer suppliers. Poor quality material improves approximately 3% more than good quality material. This results in a narrower efficiency distribution over all material. No relation between substitutional carbon concentration, interstitial oxygen concentration and FeB concentration and improved current due to double side diffusion was found.
  • Keywords
    carbon; diffusion; elemental semiconductors; interstitials; oxygen; silicon; solar cells; FeB concentration; Si:C; Si:O; double-side emitter diffusion; improved current; improved voltage; interstitial oxygen concentration; multicrystalline Si solar cells; narrower efficiency distribution; single side emitter diffused cells; substitutional carbon concentration; Analysis of variance; Carbon dioxide; Etching; Firing; Iron; Manufacturing; Photovoltaic cells; Silicon; Solar energy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190538
  • Filename
    1190538