Title :
Design rules for the reduction of the influence of material quality on the performance of crystalline silicon solar cells
Author :
Ristow, Alan ; Rohatgi, Ajeet
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Design rules are established to maximize efficiency while minimizing the influence of material quality on device efficiency. These design rules are verified using numerical modeling. It is shown that by reducing the back surface recombination velocity, adjusting doping concentration, introducing light-trapping features, and selecting the L/W ratio according to the lowest bulk lifetime in the material, absolute efficiency and efficiency variance may be simultaneously optimized in substrates of varying quality.
Keywords :
carrier lifetime; design engineering; doping profiles; elemental semiconductors; semiconductor device models; silicon; solar cells; substrates; surface recombination; L/W ratio; Si; absolute efficiency; back surface recombination velocity; crystalline silicon solar cells; design rules; doping concentration; efficiency; efficiency variance; light-trapping features; lowest bulk lifetime; material quality influence reduction; numerical modeling; quality; substrates; Conductivity; Crystalline materials; Crystallization; Design engineering; Doping; Guidelines; Passivation; Photovoltaic cells; Reflectivity; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190558
