Title :
SiON AR layer application for silicon solar cells
Author :
Huang, C.S. ; Huang, C.J. ; Chen, C.T. ; Lin, S.C. ; Kuo, L.C.
Author_Institution :
Mater. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
The experimental result of a more practical solar cell antireflection coating (ARC)- SiON film is presented. The advantage of employing SiON film is that PECVD grown SiON films needs less maintenance than grown SiN films. The thick deposited SiON attached on the PECVD chamber walls can be easily cleaned off by applying clean gas into the chamber; this can efficiently shorten equipment maintenance time, and increase production. In the SiON process, the desired film growth rate, reflectance, and refractive index are attainable by changing O2 flow.
Keywords :
antireflection coatings; plasma CVD coatings; reflectivity; refractive index; silicon compounds; solar cells; O2; O2 flow; PECVD chamber walls; PECVD grown SiON films; SiON AR layer application; SiON-Si; clean gas; equipment maintenance time; film growth rate; less maintenance; reflectance; refractive index; silicon solar cells; solar cell antireflection coating; thick deposited SiON; Coatings; Etching; Laboratories; Optical films; Photovoltaic cells; Photovoltaic systems; Reflectivity; Refractive index; Silicon compounds; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190561
