Title :
Thin films of CdIn2O4 as transparent conducting oxides
Author :
Mamazza, R. ; Balasubramanian, U. ; More, D.L. ; Ferekides, C.S.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
Cadmium indate, CdIn2O4, thin films have been deposited on glass substrates by reactive co-sputtering from Cd and In metallic targets in argon ambient with a partial pressure of oxygen of 0.25. The effect of the cadmium-indium ratio on the electro-optical properties of the films was investigated. It was found that films with a Cd/In ratio of 0.37 and subsequent annealing at 600°C yielded the best electrical and optical characteristics. Films with such ratios exhibited average optical transmission in the 400-900 nm range of over 90%, with resistivities below 3×10-4 Ω-cm. The lowest resistivity obtained was 2.95×10-4 Ω-cm, corresponding to a mobility of 30.93 cm2/V/s and carrier concentration of 5.47 × 1020 cm-3.
Keywords :
annealing; cadmium compounds; carrier density; carrier mobility; electrical resistivity; electro-optical effects; infrared spectra; semiconductor thin films; sputtered coatings; transparency; visible spectra; wide band gap semiconductors; 2.95×10-4 ohmcm; 3×10-4 ohmcm; 400 to 900 nm; 600 degC; Ar; CdIn2O4; SiO2; annealing; cadmium-indium ratio; carrier concentration; carrier mobility; electro-optical properties; optical transmission; reactive co-sputtering; resistivity; transparent conducting oxides; Amorphous materials; Annealing; Conductivity; Crystallization; Helium; Indium; Optical films; Temperature; Transistors; X-ray diffraction;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190640
