Copper indium diselenide solar cells prepared by electrodeposition

Author

Guimard, D. ; Grand, P.P. ; Bodereau, N. ; Cowache, P. ; Guillemoles, J.F. ; Lincot, D. ; Taunier, S. ; Ben Farah, M. ; Mogensen, P.

Author_Institution

Lab. d´´Electrochimie et de Chimie Analytique, Paris, France

fYear

2002

fDate

19-24 May 2002

Firstpage

692

Lastpage

695

Abstract

Copper indium diselenide (CIS) layers have been prepared by an electrodeposition based process. The composition, density and adhesion properties of theses films were found to be highly suitable for use as the active layer in a CIS solar cell. After recrystallisation and the completion of the device layer (by the deposition of CdS and ZnO layers), efficiencies as high as 8.8 % were found (total area, 100 MW/cm², no AR coating) for small area devices (0.06 cm²). To the best of our knowledge, this is a record efficiency for electrodeposited CIS, without any post additional vacuum deposition process. Promising results have been also obtained on 5×5 cm² substrates (average efficiency of 4.5 %).

Keywords

adhesion; copper compounds; current density; density; electrodeposition; indium compounds; recrystallisation; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; 4.5 percent; 5 cm; 8.8 percent; CIS solar cell; CdS layers; Cu(InGa)Se₂-CdS-ZnO; CuInSe₂; CuInSe₂ layers; ZnO layers; active layer; adhesion properties; composition; copper indium diselenide solar cells; density; efficiencies; electrodeposition; recrystallisation; small area devices; substrates; total area; Adhesives; Annealing; Coatings; Computational Intelligence Society; Copper; Current density; Indium; Photovoltaic cells; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190659

Filename

1190659