Title :
27.5% efficiency InGaP/InGaAs/Ge advanced triple junction (ATJ) space solar cells for high volume manufacturing
Author :
Stan, M.A. ; Aiken, D.J. ; Sharps, P.R. ; Fatemi, N.S. ; Spadafora, F.A. ; Hills, J. ; Yoo, H. ; Clevenger, B.
Author_Institution :
Emcore Photovoltaics, Albuquerque, NM, USA
Abstract :
Results of improvements in Emcore\´s large-area ( a 26.6 cm2) triple-junction (3J) space solar cells are presented. Volume production of this InGaP/InGaAs/Ge advanced triple-junction (ATJ) process shows an individual cell average conversion efficiency of 27.5% (AMO, 135.3 mW/cm, 28°C) with observed lot average conversion efficiencies greater than 28.0%. The ATJ cells maintain a radiation hard design similar to that used in the first generation Emcore 3J solar cells. The power remaining factors after irradiation with 1-MeV electrons at fluences of 5E14, 1E15, and 5E15 e/ cm2 are 0.89, 0.85,and 0.74 respectively. The realized improvements in the ATJ solar cell have resulted in part from an improved "blue" response in the Ge subcell, the addition of indium to the GaAs middle cell composition, and from improvements to the bulk material quality of the InGaP top cell.
Keywords :
III-V semiconductors; electron beam effects; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; semiconductor device measurement; solar cells; space vehicles; 1 MeV; 27.5 percent; 28 degC; ATJ cells; InGaP-InGaAs-Ge; InGaP/InGaAs/Ge advanced triple junction space solar cells; conversion efficiency; electron irradiation; high volume manufacturing; radiation hard design; Electrons; Fabrication; Gallium arsenide; Indium gallium arsenide; Manufacturing; Photovoltaic cells; Production; Radiative recombination; Solar power generation; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190700
