Title :
Polycrystalline silicon on glass by aluminum-induced crystallization
Author :
Gall, S. ; Muske, M. ; Sieber, I. ; Schneider, J. ; Nast, O. ; Fuhs, W.
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
Abstract :
We prepared thin polycrystalline silicon (poly-Si) films on glass by an aluminum-induced layer exchange (ALILE) process which is based on the aluminum-induced crystallization (AlC) of amorphous silicon (a-Si). During the ALILE process a glass/Al/a-Si stack is transformed into a glass/poly-Si/Al+Si structure. We investigated both the growth of the poly-Si layer and the final Al+Si layer on top of the poly-Si layer. Furthermore, we carried out the ALILE process on large glass substrates and on metal-coated glass substrates.
Keywords :
aluminium; amorphous semiconductors; crystallisation; elemental semiconductors; glass; semiconductor thin films; silicon; solar cells; ALILE process; SiO2-Si-Si:Al; aluminum-induced crystallization; aluminum-induced layer exchange process; amorphous silicon; glass; poly-Si film; polycrystalline silicon; Amorphous silicon; Annealing; Artificial intelligence; Crystallization; Glass; Optical films; Optical microscopy; Photovoltaic cells; Scanning electron microscopy; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190823
